Spin Transfer Technologies (NYU) Announces First Orthogonal Spin Transfer MRAM Devices Using MTJ Read-Out (11/17/2010)

Spin Transfer Technologies develops and commercializes its orthogonal spin transfer magnetoresistive random access memory (OST-MRAM) technology. The technology was developed from research conducted in Professor Andrew Kent’s laboratory at NYU.

From the company’s press release:
Spin Transfer Technologies is pleased to announce at the 55th Annual Conference on Magnetism and Magnetic Materials the first STT-MRAM device deploying the company’s proprietary orthogonal spin transfer technology with a magnetic tunnel junction (MTJ) for memory state read-out. The introduction of the MTJ element makes the memory device compatible with CMOS logic, and takes the orthogonal spin transfer technology a major step closer to commercialization. read full press release

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